IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features V -30 V DS • single P-Channel in DPAK R V = 10V 6.8 mW DS(on),max GS • Qualified according JEDEC1) for target applications V = 4.5V 11.0 GS • 175 °C operating temperature IIDD -70 A • 100% Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management PG-TO252-3 • Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Packing IPD068P03L3 G PG-TO252-3 068P03L Yes non dry Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C -70 A D C T =100 °C -70 C Pulsed drain current I T =25 °C2) -280 D,pulse C Avalanche energy, single pulse E I =-70 A, R =25 W 149 mJ AS D GS Gate source voltage V ±20 V GS Power dissipation P T =25 °C 100 W tot C Operating and storage temperature T , T -55 ... 175 °C j stg ESD class JESD22-A114 HBM tbd Soldering temperature 260 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 Rev. 2.1 page 1 2014-05-16

IPD068P03L3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.5 K/W junction - case thJC Thermal resistance, junction - ambient RthJA 6 cm2 cooling area2) - - 50 Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250mA -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-150 µA -1.0 -1.5 -2.0 GS(th) DS GS D V =-30 V, V =0 V, Zero gate voltage drain current I DS GS - -0.1 -1 µA DSS T =25 °C j V =-30 V, V =0 V, DS GS - -10 -100 T =150 °C j Gate-source leakage current I V =-20 V, V =0 V - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =-4.5 V, I =-45 A - 7.0 11.0 mW DS(on) GS D V =-10 V, I =-70 A - 5.0 6.8 GS D Gate resistance R - 5.8 - W G |V |>2|I |R , Transconductance g DS D DS(on)max 50 100 - S fs I =-70 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2014-05-16

IPD068P03L3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 5150 7720 pF iss V =0 V, V =-15 V, Output capacitance C GS DS - 2090 3140 oss f=1 MHz Reverse transfer capacitance C - 160 240 rss Turn-on delay time t - 11 16.5 ns d(on) V =-15 V, V =- Rise time t DD GS - 100 150 r 10 V, I =-70 A, D Turn-off delay time td(off) RG,ext=6 W - 84 126 Fall time t - 31 47 f Gate Charge Characteristics3) Gate to source charge Q - 19 25 nC gs Gate charge at threshold Q - 8 11 g(th) Gate to drain charge Qgd V =-15 V, I =-70 A, - 8 13 DD D V =0 to -10 V Switching charge Q GS - 19 27 sw Gate charge total Q - 68 91 g Gate plateau voltage V - 3.7 - V plateau Output charge Q V =-15 V, V =0 V - 48 64 nC oss DD GS Reverse Diode Diode continous forward current I - - 30 A S T =25 °C C Diode pulse current I - - 280 S,pulse V =0 V, I =-70 A, Diode forward voltage V GS F - - -1.2 V SD T =25 °C j V =15 V, I =-70 A, Reverse recovery time t R F - 46 69 ns rr di /dt=100 A/µs F Reverse recovery charge Q - 44 - nC rr Rev. 2.1 page 3 2014-05-16

IPD068P03L3 G 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); |V |≥10 V tot C D C GS 110 80 100 70 90 60 80 70 50 W] 60 A] P [tot 50 -I [D 40 40 30 30 20 20 10 10 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C1); D=0 Z =f(t ) D DS C thJS p parameter: t parameter: D=t /T p p 103 101 10 1 µs 10 µs 102 100 1 0.5 100 µs ] W A] K/ 0.2 -I [D 10 ms1 ms Z [thJS 0.1 0.05 0.02 limited by on-state 10-1 101 resistance 0.1 DC 0.01 single pulse 10-2 0.001. 00001 0.0001 0.001 0.01 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 101 10-1 100 101 102 -V [V] t [s] DS p Rev. 2.1 page 4 2014-05-16

IPD068P03L3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 70 30 -10 V 60 -4.5 V -3.5 V 25 50 20 ] 40 W -I [A] D 30 -3.2 V [mDS(on) 15 -3.0 V -3.2 V R -3.5 V 10 20 -3.0 V -4.5V 5 -10 V 10 -2.7 V 0 0 0 1 2 3 0 10 20 30 40 50 60 70 -V [V] -I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T =25 °C D GS DS D DS(on)max fs D j parameter: T j 70 110 100 60 90 50 80 70 40 A] S] 60 [D [s -I 30 gf 50 40 20 30 20 10 150 °C 10 25 °C 0 0 0 1 2 3 4 0 10 20 30 40 50 60 70 -V [V] -I [A] GS D Rev. 2.1 page 5 2014-05-16

IPD068P03L3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T ); I =-70 A; V =-10 V V =f(T ); V =V ; I =-150 mA DS(on) j D GS GS(th) j GS DS D 12 2.5 10 2 max. min. ] 8 1.5 mW 98 % V] [S(on) [GS(th) D V R 6 - 1 typ. typ. 4 0.5 2 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 104 100 Ciss 25 °C, typ Coss 103 150 °C, 98% 10 pF] A] 150 °C, typ C [ [F I 102 Crss 1 25 °C, 98% 101 0.1 0 10 20 30 0 0.5 1 1.5 -V [V] -V [V] DS SD Rev. 2.1 page 6 2014-05-16

IPD068P03L3 G 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 W V =f(Q ); I =-70 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 102 10 9 8 -15 V -6 V 7 25 °C -24 V 6 100 °C V] 101 [GS 5 V A] 125 °C - 4 [ V A -I 3 2 1 0 0 20 40 60 80 100 t [µs] -Q [nC] 100 101 AV 102 103 gate 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T ); I =-250 mA BR(DSS) j D 34 V GS Q g 32 V] [S) S 30 D R( B V V - gs(th) 28 Qg(th) Qsw Qgate Q Q 26 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev. 2.1 page 7 2014-05-16

IPD068P03L3 G Package Outline PG-TO252-3 Dimensions in mm Rev. 2.1 page 8 2014-05-16

IPD068P03L3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2014-05-16

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